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| 03.06.04 P0531961H Features * * * * * * * 1.9 GHz frequency band Typical 33.5 dBm output power Low power consumption 11 W typ. Excellent adjacent leakage power Typical 33 dB power gain Cost-effective metal package Low thermal resistance structure 1.9 GHz band Power Amplifier Module Applications * Final stage power amplifier of base station for PHS Description The P0531961H is a high performance 1.9 GHz band power amplifier module capable of 33.5 dBm output power with a typical 33 dB gain at 1.9 GHz band, housed in a cost effective metal package. This device features a low power consumption owing to the excellent linearity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 1100 mA typical. It operates from +10 V and -5 V power supplies. Power Amplifier Module Absolute Maximum Ratings P0531961H Case Temperature Tc=25 C Parameter DC Supply Voltage Input Power Storage Temperature Operating Case Temperature Symbol Vd1, Vd2 Vg1, Vg2 Pin Tstg Topt Value 12 * -7 10 -40 to + 95 -20 to + 80 Units V V dBm C C Notes: Operating of this device above any one of these parameters may cause permanent damage. *Vg1,Vg2=-5V Electrical Specifications Case Temperature Tc=25 C Value Parameter Frequency Supply Current (under operation) Gate Current Power Gain Input VSWR Harmonic Distortion 3f0 Padj1 Adjacent Channel Leakage Power Padj2 900 kHz offset -- -72 -69 dBc 600 kHz offset -- -- -50 -68 -36 -64 dBc dBc Symbol f Id Ig Ga in 2f0 Pout=33.5 dBm Vd1=10 V Vd2=10 V Vg1=-5 V Vg2=-5 V Test Conditions Min. 1880 -- -- 31 -- -- Typ. -- 1100 8 33 1.5 -50 Max. 1920 1250 15 -- 2.5 -40 MHz mA mA dB -- dBc Units Power Amplifier Module Power Characteristics 38 P0531961H 36 f=1900 MHz Vd1=Vd2=10 V Vg1=Vg2=-5 V 34 Pout (dBm), Gain (dB) 32 30 Pout(dBm) Ga(dB) 26 28 24 -10 -5 0 Pin (dBm) 5 10 Harmonic Distortion -30 2fo 3fo f=1900 MHz Vd1=Vd2=10 V Vg1=Vg2=-5 V -40 2fo, 3fo (dBc) -50 -60 -70 -80 -90 24 26 28 30 Pout(dBm) 32 34 36 Power Amplifier Module Adjacent Channel Leakage Power, Reverse IM3 P0531961H -60 Padj600kHz offset -65 Padj900kHz offset RIM3 Padj , RIM3 (dBc) f=1900 MHz Vd1=Vd2=10 V Vg1=Vg2=-5 V RIM3:f2=f1+2.7MHz Pin2=-10dBm -70 -75 -80 -85 -90 24 26 28 30 Pout (dBm) 32 34 36 Power Amplifier Module Package Drawings (Dimensions are mm) P0531961H 29.0 26.40.1 22.0 2.0 A 13.0 5.0 P0531961H 4-R1.2 2.0 1.8 9.0 2.4 SUMITOMO ELECTRIC (1) (2) (3) (4) (5) (6) // 0.1 A 4.00.5 0.25 2.0 2.5 2.5 7.5 22.00.1 2.5 2.5 2.5 1.2 :Lot No. Dimensions are mm Pin Assignment (1) RFout (4) Vd1 (2) Vd2 (5) Vg1 (3) Vg2 (6) RFin Case: GND Electron Device Department Power Amplifier Module Evaluation Board Layout (Dimensions are mm) KP009J 44.2 P0531961H 42 C2 C2 C2 C2 C1 C1 C1 C1 RFout RFin Vd2 Vg2 Vd1 Vg1 RFout Vd2 RFin Vg2 Vd1 Vg1 RFout Vd2 C1 Vg2 C1 Vd1 C1 Vg1 C1 C2 C2 C2 C2 RFin DESIGNATION C1 C2 VALUE 1F 0.1F |
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